silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 1/9 electrostatic sensitive device observe handling precautions description rd05mmp1 is a mos fet type transistor specifically designed for uhf rf power amplifiers applications. features ?high power gain: pout>5.5w, gp>8 .9db@vdd=7.2v,f=941mhz ?high efficiency: 43%min. (941mhz) ?no gate protection diode application for output stage of high power amplifiers in 941mhz band mobile radio sets. rohs compliant rd05mmp1 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it applicabl e to the following exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 40 v vgss gate to source voltage vds=0v -5 to +10 v pch channel dissipation tc=25 c 73 w pin input power zg=zl=50 ? 1.4 w id drain current - 3 a tch junction temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 1.7 c/w note: above parameter s are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 10 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 0.5 - 2.5 v pout output power 5.5 6 - w d drain efficiency f=941mhz , v dd =7.2v pin=0.7w,idq=1.0a 43 - - % vswrt load vswr tolerance v dd =9.5v,po=5.5w(pin control) f=941mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change. index mark [gate] 1.8+/-0.1 0.7+/-0.1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view (3.6) (4.5) standoff = max 0.05 detail a detail a outline drawing
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 2/9 electrostatic sensitive device observe handling precautions typical characteristics channel dissipation vs. am bient t em perat ure 0 10 20 30 40 50 60 0 40 80 120 160 200 a mbient tempera ture ta ( d e g : c. ) channel dissipation pch(w ) , on pcb with ter mal sheet and heat- sink *pcb: glass epoxy (t=0.8 mm) ther mal sheet: geltec cooh- 4000( 0.5) free air vgs-ids characteristics 0 2 4 6 8 012345 vgs(v) ids(a),gm(s) ta=+ 25c vds=10v ids gm vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0123456789 vds(v) ids(a) ta=+ 25c vg s=4.5v vg s=4.0v vg s=3.5v vg s=3.0v vg s=5.0v vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) ciss(pf) ta=+ 25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) coss(pf) ta=+ 25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 3/9 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics @f=941mhz 0 10 20 30 40 5 101520253035 pin(dbm) po(dbm) , gp(db) , idd(a ) 0 20 40 60 80 d(%) ta=+ 25c f= 941mhz vdd=7.2v idq =1.0a po 3 33 gp pin-po characteristics @f=941mhz 0 5 10 15 20 0.0 0.5 1.0 1.5 pin ( w) pout(w) , idd(a) 0 10 20 30 40 50 60 70 80 d(%) po d idd ta= 25c f=941m hz vdd= 7.2v idq = 1.0a vdd-po characteristics @f=941mhz 0 2 4 6 8 10 4681012 vdd(v) po(w) 0 1 2 3 4 5 idd(a) po idd ta= 25c f=941m hz pin= 0.7w idq = 1.0a zg =zi=50 ohm vgs-ids charactoristics 2 0 2 4 6 8 012345 vgs(v) ids(a),gm(s) vds=10v tc=-25~+75c +25c +75c -25c
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silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 5/9 electrostatic sensitive device observe handling precautions rd05mmp1 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.841 -169.5 7.706 82.9 0.020 -3.4 0.806 -171.5 125 0.845 -171.5 6.148 78.7 0.020 -5.0 0.817 -172.9 150 0.846 -172.4 5.024 75.0 0.019 -6.5 0.810 -174.2 175 0.848 -173.3 4.240 72.0 0.018 -6.6 0.817 -174.7 200 0.848 -173.7 3.669 69.4 0.017 -7.1 0.822 -175.0 225 0.852 -174.5 3.227 66.5 0.017 -8.5 0.835 -175.1 250 0.858 -174.9 2.856 63.6 0.017 -8.9 0.841 -175.3 275 0.861 -175.2 2.543 60.8 0.016 -8.7 0.838 -175.8 300 0.866 -175.3 2.279 58.6 0.015 -8.2 0.840 -176.2 325 0.872 -175.5 2.068 56.5 0.014 -3.2 0.849 -176.4 350 0.877 -175.5 1.886 54.1 0.013 -4.3 0.858 -176.8 375 0.878 -176.2 1.735 51.5 0.013 -3.6 0.868 -177.0 400 0.880 -176.6 1.584 49.3 0.012 -0.8 0.869 -177.4 425 0.886 -177.1 1.456 47.4 0.011 2.0 0.868 -177.5 450 0.891 -177.2 1.343 45.9 0.011 7.3 0.874 -177.8 475 0.897 -177.2 1.249 44.1 0.011 10.5 0.880 -178.2 500 0.900 -177.3 1.164 42.2 0.010 16.6 0.886 -178.7 525 0.904 -177.6 1.086 40.3 0.010 19.9 0.893 -179.1 550 0.905 -178.1 1.010 38.7 0.010 25.6 0.893 -179.0 575 0.907 -178.6 0.945 37.2 0.010 30.6 0.897 -179.4 600 0.913 -178.9 0.889 35.8 0.011 35.9 0.901 -179.9 625 0.918 -178.9 0.833 34.6 0.011 40.4 0.908 179.6 650 0.920 -178.9 0.786 33.2 0.011 46.3 0.911 179.2 675 0.920 -179.1 0.741 31.9 0.012 49.2 0.909 179.0 700 0.925 -179.5 0.698 30.6 0.012 51.0 0.915 178.6 725 0.925 179.8 0.660 29.4 0.013 57.5 0.916 178.4 750 0.927 179.5 0.625 28.3 0.013 58.5 0.917 177.9 775 0.931 179.2 0.595 27.1 0.014 60.4 0.921 177.4 800 0.929 179.3 0.565 26.3 0.015 62.2 0.925 177.0 825 0.936 179.2 0.537 25.4 0.016 67.1 0.924 176.7 850 0.936 179.0 0.513 24.6 0.017 67.9 0.923 176.6 875 0.935 178.5 0.488 23.6 0.019 68.4 0.921 176.3 900 0.935 178.1 0.469 22.6 0.020 67.0 0.922 175.5 925 0.933 177.9 0.446 21.7 0.023 64.2 0.919 175.0 950 0.938 177.8 0.426 20.3 0.024 52.9 0.906 175.4 975 0.943 177.8 0.404 20.3 0.019 51.8 0.920 176.6 1000 0.943 177.5 0.388 19.9 0.019 61.8 0.933 176.0 s11 s21 s12 s22
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 6/9 electrostatic sensitive device observe handling precautions rd05mmp1 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.878 -174.2 7.474 85.7 0.014 4.3 0.869 -176.3 125 0.884 -175.6 6.046 81.9 0.014 2.9 0.865 -176.9 150 0.880 -176.9 4.919 78.9 0.014 3.3 0.865 -177.5 175 0.877 -177.4 4.153 77.5 0.013 4.7 0.872 -177.9 200 0.879 -177.7 3.636 76.1 0.013 8.8 0.873 -178.3 225 0.888 -178.2 3.246 73.8 0.013 4.2 0.875 -178.5 250 0.888 -178.7 2.912 71.1 0.013 7.9 0.874 -178.6 275 0.884 -179.1 2.598 69.0 0.012 9.1 0.869 -178.8 300 0.884 -179.2 2.351 67.4 0.012 11.5 0.872 -178.9 325 0.891 -179.6 2.152 66.0 0.012 13.3 0.882 -179.2 350 0.893 -179.7 1.995 64.1 0.012 18.1 0.884 -179.4 375 0.897 179.8 1.849 62.2 0.011 16.1 0.886 -179.5 400 0.897 179.7 1.708 60.0 0.012 20.8 0.883 -179.3 425 0.896 179.6 1.580 58.5 0.012 25.7 0.883 -179.6 450 0.902 179.3 1.475 57.1 0.012 26.7 0.886 -179.7 475 0.903 178.9 1.388 55.6 0.012 30.8 0.892 180.0 500 0.906 178.7 1.308 53.7 0.012 33.2 0.893 179.9 525 0.905 178.5 1.222 52.1 0.012 35.6 0.894 179.8 550 0.906 178.4 1.152 50.6 0.012 38.7 0.896 179.7 575 0.910 178.2 1.086 49.4 0.012 42.5 0.898 179.6 600 0.914 177.9 1.030 48.2 0.012 45.7 0.902 179.2 625 0.915 177.5 0.978 46.6 0.013 46.2 0.906 179.1 650 0.916 177.3 0.928 45.1 0.013 52.5 0.906 179.0 675 0.917 177.3 0.877 43.8 0.014 53.1 0.906 179.1 700 0.919 177.2 0.832 43.0 0.015 55.3 0.905 178.8 725 0.921 176.9 0.798 41.7 0.015 56.8 0.908 178.5 750 0.925 176.6 0.759 40.5 0.015 59.3 0.911 178.1 775 0.924 176.5 0.725 39.2 0.016 59.2 0.916 177.9 800 0.926 176.3 0.694 38.3 0.016 62.2 0.916 178.0 825 0.927 176.1 0.661 37.2 0.017 63.6 0.921 178.1 850 0.929 175.8 0.634 36.5 0.018 64.2 0.918 177.9 875 0.929 175.6 0.611 35.5 0.019 65.1 0.917 177.4 900 0.931 175.5 0.585 34.3 0.019 66.8 0.921 177.0 925 0.930 175.2 0.562 33.4 0.020 66.6 0.923 176.8 950 0.928 175.2 0.539 32.6 0.021 65.2 0.928 176.9 975 0.932 174.8 0.518 31.9 0.022 67.9 0.930 177.3 1000 0.937 174.8 0.496 31.1 0.022 68.8 0.926 177.0 s11 s21 s12 s22
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 7/9 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 8/9 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these materials
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